BCG002 transistor equivalent, 2w gan power transistor.
* 33.5 dBm Typical Saturated Output Power (P3dB) @ 12 GHz
* 12.5 dB Typical Saturated gain (G3dB) @ 12 GHz
* 55 % PAE Typical @ 12 GHz
* 0.15 X 480 Micron.
where high-gain and high power from DC to 26 GHz. The product may be used in either wideband or narrow-band applications.
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