Datasheet4U Logo Datasheet4U.com

BH616UV1611 - Ultra Low Power/High Speed CMOS SRAM

General Description

The BH616UV1611 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 by 16 bits and operates in a wide range of 1.65V to 3.6V supply voltage.

Key Features

  • Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 10mA (Max. ) at 55ns 2mA (Max. ) at 1MHz Standby current : 5.0uA (Typ. ) at 3.0V/25OC VCC = 1.2V Data retention current : 1.5uA(Typ. ) at 25OC Ÿ High speed access time : -55 55ns (Max. ) at VCC=1.65~3.6V -70 70ns (Max. ) at VCC=1.65~3.6V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE1, CE2 and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin. Ÿ Three.

📥 Download Datasheet

Datasheet Details

Part number BH616UV1611
Manufacturer Brilliance Semiconductor
File Size 177.87 KB
Description Ultra Low Power/High Speed CMOS SRAM
Datasheet download datasheet BH616UV1611 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BH6111FV Power-unit Rohm
BH6113FV Power-unit Rohm
BH6114FV Power-unit Rohm
BH6150F System reset Rohm
BH6172GU System Regulator Rohm

Other Datasheets by Brilliance Semiconductor

Part Number Description
BH616UV1610 Ultra Low Power/High Speed CMOS SRAM
BH616UV4010 Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit
BH616UV8010 Ultra Low Power/High Speed CMOS SRAM
BH616UV8011 Ultra Low Power/High Speed CMOS SRAM
BH62UV1600 Ultra Low Power/High Speed CMOS SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit Pb-Free and Green package materials are compliant to RoHS www.DataSheet4U.com BH616UV1611 n FEATURES Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 10mA (Max.) at 55ns 2mA (Max.) at 1MHz Standby current : 5.0uA (Typ.) at 3.0V/25OC VCC = 1.2V Data retention current : 1.5uA(Typ.) at 25OC Ÿ High speed access time : -55 55ns (Max.) at VCC=1.65~3.6V -70 70ns (Max.) at VCC=1.65~3.6V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE1, CE2 and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin. Ÿ Three state outputs and TTL compatible Ÿ Fully static operation, no clock, no refresh Ÿ Data retention supply voltage as low as 1.