BH616UV8011 Datasheet - Brilliance Semiconductor

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BH616UV8011 Ultra Low Power/High Speed CMOS SRAM

Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit Green package materials are compliant to RoHS www.DataSheet4U.com BH616UV8011 n .
The BH616UV8011 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 by 16 bits and operates in a wide range o.

BH616UV8011_BrillianceSemiconductor.pdf

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Datasheet Details

Part number:

BH616UV8011

Manufacturer:

Brilliance Semiconductor

File Size:

179.16 KB

Description:

Ultra Low Power/High Speed CMOS SRAM

Features

* Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA (Max. )at 55ns 2mA (Max. ) at 1MHz Standby current : 2.5uA (Typ. ) at 3.0V/25OC VCC = 1.2V Data retention current : 1.2uA (Typ. ) at 25OC Ÿ High speed access time : -55 55ns (Max. ) at VCC=

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BH616UV8011 Ultra Low Power High Speed CMOS SRAM Brilliance Semiconductor

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