BH616UV1611 Ultra Low Power/High Speed CMOS SRAM

Brilliance Semiconductor

Description

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit Pb-Free and Green package materials are compliant to RoHS www.DataSheet4U.com BH616UV16.
The BH616UV1611 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 by 16 bits and operates in a wide range.

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Datasheet Specifications

Part number: BH616UV1611
Manufacturer: Brilliance Semiconductor
File Size: 177.87 KB
Datasheet: BH616UV1611_BrillianceSemiconductor.pdf
Description: Ultra Low Power/High Speed CMOS SRAM

Features

* Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 10mA (Max. ) at 55ns 2mA (Max. ) at 1MHz Standby current : 5.0uA (Typ. ) at 3.0V/25OC VCC = 1.2V Data retention current : 1.5uA(Typ. ) at 25OC Ÿ High speed access time : -55 55ns (Max. ) at VCC=

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BH616UV1611 Ultra Low Power High Speed CMOS SRAM Brilliance Semiconductor

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