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BH616UV4010 Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit

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Description

Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit Green package materials are compliant to RoHS BH616UV4010 www.DataSheet4U.com n .
The BH616UV4010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 262,144 by 16 bits and operates in a wide range o.

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Datasheet Specifications

Part number
BH616UV4010
Manufacturer
Brilliance Semiconductor
File Size
185.29 KB
Datasheet
BH616UV4010_BrillianceSemiconductor.pdf
Description
Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit

Features

* Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA (Max. ) at 55ns 2mA (Max. ) at 1MHz Standby current : 2.0uA (Typ. ) at 25OC VCC = 1.2V Data retention current : 1.0uA at 25OC Ÿ High speed access time : -55 55ns (Max. ) at VCC=1.65~3.6V Ÿ

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