• Part: A1SHB
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Bruckewell Technology
  • Size: 385.32 KB
Download A1SHB Datasheet PDF
Bruckewell Technology
A1SHB
A1SHB is P-Channel Enhancement Mode Power MOSFET manufactured by Bruckewell Technology.
Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features - VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V S Schematic diagram - High power and current handing capability - Lead free product is acquired - Surface mount package Marking and pin assignment Application - PWM applications - Load switch SC70-3/ SOT-323 top view Package Marking and Ordering Information Device Marking Device Device Package MS23P01S SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current -Pulsed (Note 1) ID IDM Maximum Power...
A1SHB reference image

Representative A1SHB image (package may vary by manufacturer)