A1SHB - P-Channel Enhancement Mode Power MOSFET

Bruckewell

Datasheet Details

Part number	A1SHB
Manufacturer	Bruckewell
File Size	385.32 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	A1SHB-Bruckewell.pdf

The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Marking and pin assignment.

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Published: Jan 2, 2017 |