Download MS67C10 Datasheet PDF
MS67C10 page 2
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MS67C10 page 3
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MS67C10 Key Features

  • Fast switching
  • Green Device Available
  • Suit for 4.5V Gate Drive

MS67C10 Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.