MS6N90 Datasheet (N-Channel MOSFET) | Bruckewell Technology

Part: MS6N90
Manufacturer: Bruckewell Technology
Size: 1.00 MB

MS6N90 Key Features

RDS(on) (Max 2.4 Ω )@VGS=10V
Gate Charge (Typical 33nC)
Excellent Switching Characteristics
Improved dv/dt Capability, High
Ruggedness
100% Avalanche Tested
Maximum Junction Temperature
Range (150°˚C)
RoHS pliant package Application
Open Framed Power Supply

MS6N90 Description

The MS6N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications.