MS6N90 mosfet equivalent, n-channel mosfet.
* RDS(on) (Max 2.4 Ω )@VGS=10V
* Gate Charge (Typical 33nC)
* Excellent Switching Characteristics
* Improved dv/dt Capability, High
* Ruggedness
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Features
* RDS(on) (Max 2.4 Ω )@VGS=10V
* Gate Charge (Typical 33nC)
* Excellent Switching Characteristics <.
The MS6N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-.
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