MS6N95 mosfet equivalent, n-channel mosfet.
* RDS(on) (Max 2.4 Ω )@VGS=10V
* Gate Charge (Typical 33nC)
* Improved dv/dt Capability, High Ruggedness
* 100% Avalanche Tested
* Maximum Junction Te.
Features
* RDS(on) (Max 2.4 Ω )@VGS=10V
* Gate Charge (Typical 33nC)
* Improved dv/dt Capability, High Rugge.
The MS6N95 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial.
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