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N-Channel Trench Power MOSFET
General Description
The CSJ60N62/CSJ60N62A is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching.
Features
● VDS=60V；ID=80A@ VGS=10V； RDS(ON)<7.2mΩ @ VGS=10V
● Ultra Low On-Resistance ● High UIS and UIS 100% Test
Application
● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
CSJ60N62 /CSJ60N62A
To-263 Top View
Schematic Diagram
VDS = 60 V ID = 80 A RDS(ON) = 6.2 mΩ
Package Marking and Ordering Information
Device
Device Marking
Device Package
CSJ60N62
CSJ60N62
TO-263
CSJ60N62A
CSJ60N62
TO-263
Package Typ Tape&Reel Tube
Table 1.
CSJ60N62 Datasheet
