SI2300 - N-Channel MOSFET

Key Features

VDS=20V,RDS(ON)=40mΩ@VGS=4.5V,ID=5.0A.
VDS=20V,RDS(ON)=60mΩ@VGS=2.5V,ID=4.0A.
VDS=20V,RDS(ON)=75mΩ@VGS=1.8V,ID=1.0A Absolute Maximum Ratings Ta=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous.
TJ=125℃ -Pulsed Power Dissipation.
Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range.
Surface Mounted on FR4 Board, t≤10sec. Symbol VDS VGS ID IDM PD RthJA Tj. Tstg Rating 20 ±10 3.8 15 1.25 100 -55 to 15.

SI2300 n-channel mosfet by CCSemi - Datasheet Preview

Datasheet Details

Part number	SI2300
Manufacturer	CCSemi
File Size	328.30 KB
Description	N-Channel MOSFET
Datasheet	SI2300 Datasheet

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MOSFET N-Channel Enhancement Mode Field Effect Transistor SI2300 Features ◆ VDS=20V,RDS(ON)=40mΩ@VGS=4.5V,ID=5.0A ◆ VDS=20V,RDS(ON)=60mΩ@VGS=2.5V,ID=4.0A ◆ VDS=20V,RDS(ON)=75mΩ@VGS=1.8V,ID=1.0A Absolute Maximum Ratings Ta=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous* TJ=125℃ -Pulsed Power Dissipation* Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board, t≤10sec. Symbol VDS VGS ID IDM PD RthJA Tj.Tstg Rating 20 ±10 3.8 15 1.25 100 -55 to 150 Unit V V A A W ℃/W ℃ www.canctech.com Revision 2016/8/15 @2016-2017 CCSemi .