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SI2300 Datasheet N-Channel MOSFET

Manufacturer: CCSemi

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Datasheet Details

Part number SI2300
Manufacturer CCSemi
File Size 328.30 KB
Description N-Channel MOSFET
Download SI2300 Download (PDF)

Overview

MOSFET N-Channel Enhancement Mode Field Effect Transistor SI2300.

Key Features

  • VDS=20V,RDS(ON)=40mΩ@VGS=4.5V,ID=5.0A.
  • VDS=20V,RDS(ON)=60mΩ@VGS=2.5V,ID=4.0A.
  • VDS=20V,RDS(ON)=75mΩ@VGS=1.8V,ID=1.0A Absolute Maximum Ratings Ta=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous.
  • TJ=125℃ -Pulsed Power Dissipation.
  • Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range.
  • Surface Mounted on FR4 Board, t≤10sec. Symbol VDS VGS ID IDM PD RthJA Tj. Tstg Rating 20 ±10 3.8 15 1.25 100 -55 to 15.

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