SI2300 Datasheet | Specifications & PDF Download

SMD Type N-Channel Enhancement MOSFET SI2300 (KI2300) MOSFIECT Features VDS=20V ID=5.0A RDS(ON)=25m @VGS=4.5V,ID=5.0A RDS(ON)=35m @VGS=2.5V,ID=4.0A

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SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD. SOT-23-3 Plastic-Encapsulate MOSFETS SI2300 N-Channel Enhancement MOSFET Features VDS=20V,RDS(ON)=40m @VGS=

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20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 70m Ω 80mΩ Features Advanced trench proc

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www.vishay.com Si2300DS Vishay Siliconix N-Channel 30 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: P2 1 G Top View 2 S FEATURES • TrenchFET

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Plastic-Encapsulate Mosfets FEATURES Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Aval

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MCC R Micro Commercial Components Micro Commercial Components 130 W Cochran St, Unit B Simi Valley, CA 93065 Tel:818-701-4933 SI2300 Features • Ha

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Si2300 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive req

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SI2300DS-T1-GE3 www.VBsemi.com SI2300DS-T1-GE3 N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 a

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MOSFET N-Channel Enhancement Mode Field Effect Transistor SI2300 Features ◆ VDS=20V,RDS(ON)=40mΩ@VGS=4.5V,ID=5.0A ◆ VDS=20V,RDS(ON)=60mΩ@VGS=2.5V,ID=4

Rating: 1 ★ (1 votes)