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2N697 Datasheet NPN SILICON EPITAXIAL TRANSISTOR

Manufacturer: CDIL

Datasheet Details

Part number 2N697
Manufacturer CDIL
File Size 138.55 KB
Description NPN SILICON EPITAXIAL TRANSISTOR
Download 2N697 Download (PDF)

General Description

SYMBOL Collector Emitter Voltage VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Power Dissipation @ Ta=25ºC PD Derate Above 25ºC Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Base Breakdown Voltage BVCBO IC=100µA,IE=0 Collector Emitter Breakdown Voltage BVCER* IC=100mA,RBE=10Ω Emiter Base Breakdown Voltage BVEBO IE=100µA, IC=0 Collector Cut off Current ICBO VCB=30V, IE=0 VCB=30V, IE=0,Ta=150ºC DC Current Gain hFE* IC=150mA,VCE=10V Collector Emitter Saturation Voltage VCE(Sat) * IC=150mA,IB=15mA Base Emitter Saturation Voltage VBE(Sat) * IC

Overview

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N 697 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified.