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CMBT5089 - (CMBT5088 / CMBT5089) SILICON PLANAR EPITAXIAL TRANSISTORS

Download the CMBT5089 datasheet PDF. This datasheet also covers the CMBT5088 variant, as both devices belong to the same (cmbt5088 / cmbt5089) silicon planar epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (CMBT5088_CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CMBT5089
Manufacturer CDIL
File Size 120.01 KB
Description (CMBT5088 / CMBT5089) SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet CMBT5089 Datasheet

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Other Datasheets by CDIL

Part Number Description
CMBT5087 SILICON PLANAR EPITAXIAL TRANSISTORS
CMBT5088 (CMBT5088 / CMBT5089) SILICON PLANAR EPITAXIAL TRANSISTORS
CMBT5400 SILICON PLANAR EPITAXIAL TRANSISTORS
CMBT5401 SILICON PLANAR EPITAXIAL TRANSISTORS
CMBT5550 SILICON PLANAR EPITAXIAL TRANSISTORS

Full PDF Text Transcription

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www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5088 CMBT5089 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBT5088 = 1Q CMBT5089 = 1R PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS 5088 5089 Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current Total power dissipation up to Tamb = 25 °C Junction temperature Collector-emitter saturation voltage IC = 10 mA; IB = 1 mA D.C. current gain IC = 100 µA; VCE = 5 V Transition frequency at f = 20 MHz IC = 500 µA; VCE = 5 V *FR-5 Board = 1.0 × 0.75 × 0.062 in. VCB0 VCE0 IC Ptot* Tj VCEsat hFE max. max.
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