CEB6106 - N-Channel MOSFET

CET

Key Features

57V, 56A ,RDS(ON) = 19mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S.

CEB6106 n-channel mosfet by CET - Datasheet Preview

Datasheet Details

Part number	CEB6106
Manufacturer	CET
File Size	190.50 KB
Description	N-Channel MOSFET
Datasheet	CEB6106 Datasheet

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Full PDF Text Transcription (Reference)

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CEP6106/CEB6106 N-Channel Enhancement Mode Field Effect Transistor FEATURES 57V, 56A ,RDS(ON) = 19mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 57 ±20 56 170 131 0.