CEB6056
CEB6056 is N-Channel MOSFET manufactured by CET.
FEATURES
60V, 100A, RDS(ON) = 6.2mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; Ro HS pliant. TO-220 & TO-263 package.
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 100 IDM 360
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
100 0.66
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
EAS IAS TJ,Tstg
272 33 -55 to 175
Units V V A A W
W/ C m J A C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.5 62.5
Units C/W C/W
Details are subject to change without notice .
Rev 2. 2011.Dec http://.cet-mos.
CEP6056/CEB6056
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics...