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CEG2108E Datasheet Preview

CEG2108E Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

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CEG2108E pdf
CEG2108E
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
20V, 8.5A, RDS(ON) = 14m@VGS = 10V.
RDS(ON) = 15m@VGS = 4.5V.
RDS(ON) = 20m@VGS = 2.5V.
RDS(ON) = 28m@VGS = 1.8V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TSSOP-8 for Surface Mount Package.
G2
S2
S2
D
TSSOP-8
G1
S1
S1
D
D
*1K
G1
*1K
G2
S1
*Typical value by design
D1
S1 2
S1 3
G1 4
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 20
VGS ±12
Drain Current-Continuous
Drain Current-Pulsed a
ID 8.5
IDM 34
Maximum Power Dissipation
PD 1.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
D
S2
8D
7 S2
6 S2
5 G2
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
83
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.Oct
http://www.cetsemi.com



CET
CET

CEG2108E Datasheet Preview

CEG2108E Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEG2108E pdf
CEG2108E
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Symbol
Test Condition
Min Typ Max Units
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
20
VGS = VDS, ID = 250µA
VGS = 10V, ID = 8A
VGS = 4.5V, ID = 4A
VGS = 2.5V, ID = 2A
VGS = 1.8V, ID = 1A
0.4
V
1 µA
10 uA
-10 uA
1.0 V
11 14 m
12 15 m
14 20 m
20 28 m
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 1A,
VGS = 10V, RGEN = 3
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID =8A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 1A
35 pF
185 pF
15 pF
487
800
1728
6180
4.3
1.1
2.5
us
us
us
us
nC
nC
nC
1A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 board,t < 10sec.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2


Part Number CEG2108E
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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