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CEG3456
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 5.1A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package.
D S S D
TSSOP-8
G S S D
(1,5,8)D
(4)G
(2,3,6,7)S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 30
VGS ±20
ID 5.1 IDM 20
Maximum Power Dissipation
PD 1.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 83
Units V V A A W C
Units C/W
2002.
CEG3456 Datasheet
