CET CEG2287
Dual P-Channel MOSFET
FEATURES
-20V, -4.7A, RDS(ON) = 30mΩ @VGS = -10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 6 S2 5 G2ABSOLUTE MAXIMUM RATINGS
TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS -20 VGS ±12 ID -4.7 IDM -18 Maximum Power Dissipation PD 1.25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units V V A A W C Units C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2006.Oct CEG2287 Electrical Characteris