CEG2108E
CEG2108E is Dual N-Channel MOSFET manufactured by CET.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
Features
20V, 8.5A, RDS(ON) = 14mΩ @VGS = 10V.
RDS(ON) = 15mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. RDS(ON) = 28mΩ @VGS = 1.8V. Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; Ro HS pliant.
TSSOP-8 for Surface Mount Package.
G2 S2
S2
TSSOP-8
G1 S1 S1 D
- 1K G1
- 1K G2
S1
- Typical value by design
D1 S1 2 S1 3 G1...
