datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf





CET
CET

CEK01N6 Datasheet Preview

CEK01N6 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEK01N6 pdf
CEK01N6
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
650V, 0.3A, RDS(ON) = 15 @VGS = 10V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TO-92(Bulk) & TO-92(Ammopack) package.
D
GD S
TO-92(Ammopack)
GD S
TO-92(Bulk)
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 650
VGS ±30
Drain Current-Continuous
Drain Current-Pulsed a
ID 0.3
IDM 1.2
Maximum Power Dissipation
PD 3.1
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Leadb
Symbol
RθJL
Limit
40
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 4. 2008.Aug.
http://www.cetsemi.com



CET
CET

CEK01N6 Datasheet Preview

CEK01N6 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEK01N6 pdf
CEK01N6
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 650V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
650
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 0.2A
2
4
12 15
V
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS b
VDS = 20V, ID = 0.3A
0.5
S
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
140
52
pF
pF
Crss 23 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 0.3A,
VGS = 10V, RGEN = 4.7
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 0.3A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
17 34 ns
11 22 ns
28 56 ns
30 60 ns
9.9 12.8 nC
1 nC
7.3 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 0.2A
0.3 A
1.6 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
6
2


Part Number CEK01N6
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
PDF Download
CEK01N6 pdf
CEK01N6 Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 CEK01N6 N-Channel Enhancement Mode Field Effect Transistor CET
CET
CEK01N6 pdf
2 CEK01N65 N-Channel Enhancement Mode Field Effect Transistor CET
CET
CEK01N65 pdf
3 CEK01N65A N-Channel Enhancement Mode Field Effect Transistor CET
CET
CEK01N65A pdf
4 CEK01N6G N-Channel Enhancement Mode Field Effect Transistor CET
CET
CEK01N6G pdf
5 CEK01N7 N-Channel Enhancement Mode Field Effect Transistor CET
CET
CEK01N7 pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy