CET CEK01N7
N-Channel MOSFET
| Part No. | CEK01N7 |
|---|---|
| Datasheet | CEK01N7 Download |
| Manufacturer |  CET |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
700V, 0.3A, RDS(ON) = 18 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. D GD S TO-92(Ammopack) GD S TO-92(Bulk) G SABSOLUTE MAXIMUM RATINGS
TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 700 VGS ±30 Drain Current-Continuous Drain Current-Pulsed a ID 0.3 IDM 1.2 Maximum Power Dissipation PD 3.1 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Leadb Symbol RθJL Limit 40 Units V V A A W C Units C/W Details are subject to change without notice . 1 Rev 1. 2010.June. CEK01N7ELECTRICAL CHARACTERISTICS
Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics BVDSS IDSS IGSSF...
