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N-Channel Enhancement Mode Field Effect Transistor FEATURES
600V, 1A, RDS(ON) = 9.3 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package.
CEK01N6G
D
G
G D G
S
D
TO-92(Ammopack)
S
TO-92(Bulk)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
b
TA = 25 C unless otherwise noted Symbol VDS VGS IDa IDM PD TJ,Tstg Limit 600 Units V V A A W C
±30
0.4 1.6 3.1 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Lead Symbol RθJL Limit 40 Units C/W
Details are subject to change without notice . 1
Rev 1.
CEK01N6G Datasheet
