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CEK01N6
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
650V, 0.3A, RDS(ON) = 15 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package.
D
GD S TO-92(Ammopack)
GD S
TO-92(Bulk)
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 650
VGS ±30
Drain Current-Continuous Drain Current-Pulsed a
ID 0.3 IDM 1.2
Maximum Power Dissipation
PD 3.1
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Leadb
Symbol RθJL
Limit 40
Units V V A A W C
Units C/W
Details are subject to change without notice .
1
Rev 4. 2008.Aug.
CEK01N6 Datasheet
