Datasheet Summary
N-Channel Enhancement Mode Field Effect Transistor
Features
600V, 0.4A, RDS(ON) = 8.5 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package.
GD S TO-92(Ammopack)
GD...