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CEK02N7G - N-Channel MOSFET

Datasheet Summary

Features

  • 700V, 0.4A, RDS(ON) = 6.75 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. D GD S TO-92(Ammopack) GD S TO-92(Bulk) G S.

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Datasheet Details

Part number CEK02N7G
Manufacturer CET
File Size 422.60 KB
Description N-Channel MOSFET
Datasheet download datasheet CEK02N7G Datasheet
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Full PDF Text Transcription

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CEK02N7G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 700V, 0.4A, RDS(ON) = 6.75 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. D GD S TO-92(Ammopack) GD S TO-92(Bulk) G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 700 VGS ±30 Drain Current-Continuous Drain Current-Pulsed a ID 0.4 IDM 1.6 Maximum Power Dissipation PD 3.
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