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CET

CEK01N7 Datasheet Preview

CEK01N7 Datasheet

N-Channel MOSFET

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CEK01N7
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
700V, 0.3A, RDS(ON) = 18 @VGS = 10V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TO-92(Bulk) & TO-92(Ammopack) package.
D
GD S
TO-92(Ammopack)
GD S
TO-92(Bulk)
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 700
VGS ±30
Drain Current-Continuous
Drain Current-Pulsed a
ID 0.3
IDM 1.2
Maximum Power Dissipation
PD 3.1
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Leadb
Symbol
RθJL
Limit
40
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2010.June.
http://www.cet-mos.com




CET

CEK01N7 Datasheet Preview

CEK01N7 Datasheet

N-Channel MOSFET

No Preview Available !

CEK01N7
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 700V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 0.2A
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS b
Ciss
Coss
Crss
VDS = 20V, ID = 0.3A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 0.3A,
VGS = 10V, RGEN = 4.7
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 0.3A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 0.2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
700
2
Typ
14.5
0.5
170
60
30
10
11
24
62
10
0.6
7.5
Max Units
1
100
-100
V
µA
nA
nA
4V
18
S
pF
pF
pF
20 ns
22 ns
48 ns
124 ns
12.8 nC
nC
nC
0.3 A
1.6 V
6
2


Part Number CEK01N7
Description N-Channel MOSFET
Maker CET
Total Page 4 Pages
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