CEM6601 Key Features
- 60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS
- Part: CEM6601
- Manufacturer: CET
- Size: 344.80 KB
Related CET Datasheets
| Part Number | Description |
|---|---|
| CEM6607 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| CEM6659 | Dual Enhancement Mode Field Effect Transistor |
| CEM6056L | N-Channel Enhancement Mode Field Effect Transistor |
| CEM6080 | Dual Enhancement Mode Field Effect Transistor |
| CEM6338 | Dual N-Channel MOSFET |
CEM6601 Description
P-Channel Enhancement Mode Field Effect Transistor.