CEM6607 Key Features
- 60V, -3.8A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS
CEM6607 is Dual P-Channel Enhancement Mode Field Effect Transistor manufactured by CET.
| Part Number | Description |
|---|---|
| CEM6601 | P-Channel Enhancement Mode Field Effect Transistor |
| CEM6659 | Dual Enhancement Mode Field Effect Transistor |
| CEM6056L | N-Channel Enhancement Mode Field Effect Transistor |
| CEM6080 | Dual Enhancement Mode Field Effect Transistor |
| CEM6338 | Dual N-Channel MOSFET |
Dual P-Channel Enhancement Mode Field Effect Transistor.