CEM7101 transistor equivalent, dual n-channel enhancement mode field effect transistor.
30V, 4A, RDS(ON) = 75mΩ
5
@VGS = 10V.
RDS(ON) = 100mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Le.
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