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CEP1185 Datasheet Preview

CEP1185 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CEP1185 pdf
CEP1185/CEB1185
CEF1185
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP1185
CEB1185
CEF1185
VDSS
800V
800V
800V
RDS(ON)
2.9
2.9
2.9
ID
4.4A
4.4A
4.4A d
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263
VDS 800
VGS ±30
ID
4.4
2.8
IDM e
17.6
139
PD 1.1
TO-220F
4.4 d
2.8 d
17.6 d
45
0.4
Single Pulsed Avalanche Energy h
EAS 331
Single Pulsed Avalanche Current h
IAS 4.7
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.9
62.5
2.8
62.5
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2014.May
http://www.cetsemi.com



CET
CET

CEP1185 Datasheet Preview

CEP1185 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEP1185 pdf
CEP1185/CEB1185
CEF1185
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 800V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 2.2A
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 400V, ID = 4.8A,
VGS = 10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 640V, ID = 4.8A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 4.4A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
h.L = 30mH, IAS =4.7A, VDD = 50V, RG = 25, Starting TJ = 25 C
Min
800
2
Typ
2.4
1285
105
15
29
71
63
24
25
6
9
Max Units
1
100
-100
V
µA
nA
nA
4V
2.9
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
4.4 A
1.2 V
2


Part Number CEP1185
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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