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CEP12N6 Datasheet Preview

CEP12N6 Datasheet

N-Channel MOSFET

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CEP12N6/CEB12N6
CEF12N6
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP12N6
CEB12N6
CEF12N6
VDSS
600V
600V
600V
RDS(ON)
0.65Ω
0.65Ω
0.65Ω
ID
12A
12A
12A d
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
DG
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
600
±30
12
48
250
1.67
12 d
48d
60
0.4
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.6
62.5
2.5
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2008.Mar.
http://www.cet-mos.com




CET

CEP12N6 Datasheet Preview

CEP12N6 Datasheet

N-Channel MOSFET

No Preview Available !

CEP12N6/CEB12N6
CEF12N6
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS =600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
Forward Transconductance
Dynamic Characteristics c
gFS VDS = 25V, ID =6A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID =12A,
VGS = 10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 400V,ID = 12A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
ISf
VSDg
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) =6A .
g.Full package VSD test condition IS =6A .
VGS = 0V, IS = 12A
Min
600
2
Typ
0.53
10
2000
220
11
39
58
149
40
51
11
19
Max Units
1
100
-100
V
µA
nA
nA
4V
0.65
S
pF
pF
pF
78 ns
116 ns
298 ns
80 ns
66 nC
nC
nC
12 A
1.4 V
2


Part Number CEP12N6
Description N-Channel MOSFET
Maker CET
PDF Download

CEP12N6 Datasheet PDF





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