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1N5818W - 1A Surface Mount Schottky Barrier Diode

This page provides the datasheet information for the 1N5818W, a member of the 1N5817W 1A Surface Mount Schottky Barrier Diode family.

Datasheet Summary

Description

Cathode Anode 2 Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage 1N5817W 1N5818W 1N5819W Average Forward Rectified Current Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) Power Dissipation Operating Temperature Range Storage Temperature Range Top View

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Datasheet Details

Part number 1N5818W
Manufacturer CHINA BASE
File Size 117.96 KB
Description 1A Surface Mount Schottky Barrier Diode
Datasheet download datasheet 1N5818W Datasheet
Additional preview pages of the 1N5818W datasheet.

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Full PDF Text Transcription

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1N5817W-1N5819W 1A Surface Mount Schottky Barrier Diode PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage 1N5817W 1N5818W 1N5819W Average Forward Rectified Current Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) Power Dissipation Operating Temperature Range Storage Temperature Range Top View Marking Code: 1N5817W: SJ 1N5818W: ME 1N5819W: SL Simplified outline SOD-123 and symbol Symbol VR IF(AV) IFSM Ptot Tj Tstg Value 20 30 40 1 9 450 - 55 to + 125 - 55 to + 125 Unit V A A mW OC OC Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 1 mA Reverse Current at VR = 20 V at VR = 30 V at VR = 40 V at VR = 4 V at VR = 6 V Forward Voltage at IF = 0.
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