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2SC4115 NPN Silicon Epitaxial Planar Transistor
The transistor is subdivided into three groups, Q, R and S, according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
Features
․Low VCE(sat) ․Excellent current gain characteristics
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current
Power Dissipation Junction Temperature Storage Temperature Range *Notes: Single pulse Pw=10ms
Symbol VCBO VCEO VEBO
IC
Ptot Tj TS
Value 40 20 6 3 5 300 150
-55 to +150
Unit V V V
A(DC) A(Pulse)*
mW OC OC
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7/15/2011
Characteristics at Tamb=25 OC
Parameter
Symbol
Min.
2SC4115 Datasheet
