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2SC4115 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Low VCE(sat). Pb Lead-free VCE(sat) = 0.2V (Typ. )(IC / IB = 2A / 0.1A).
  • Excellent current gain characteristics.
  • Complements to 2SA1585. Production specification 2SC4115.

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NPN Epitaxial Planar Silicon Transistor FEATURES  Low VCE(sat). Pb Lead-free VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)  Excellent current gain characteristics.  Complements to 2SA1585. Production specification 2SC4115 ORDERING INFORMATION Type No. Marking 2SC4115 4115G/4115R/4115S SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 40 20 6 3.0 500 -55 to +150 Units V V V A mW ℃ E105 Rev.A www.gmesemi.