Datasheet Summary
NPN Epitaxial Planar Silicon Transistor
Features
- Low VCE(sat).
Pb
Lead-free
VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)
- Excellent current gain characteristics.
- plements to 2SA1585.
Production specification
ORDERING INFORMATION
Type No.
Marking
4115G/4115R/4115S
SOT-89 Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO VCEO VEBO IC PC Tj,Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature
40 20 6 3.0 500 -55 to +150
Units V V V A mW ℃
E105 Rev.A
.gmesemi.
Production...
