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2SC4115 - NPN Silicon Epitaxial Planar Transistor

Key Features

  • ˙ Low VCE(sat) ˙ Excellent current gain characteristics TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25 OC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Symbol VCBO VCEO VEBO IC Power Dissipation Junction Temperature Storage Temperature Range.
  • Notes: Single pulse Pw=10ms Ptot Tj TS G S P FORM A IS.

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Datasheet Details

Part number 2SC4115
Manufacturer SEMTECH
File Size 259.86 KB
Description NPN Silicon Epitaxial Planar Transistor
Datasheet download datasheet 2SC4115 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ST 2SC4115 NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features ˙ Low VCE(sat) ˙ Excellent current gain characteristics TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25 OC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Symbol VCBO VCEO VEBO IC Power Dissipation Junction Temperature Storage Temperature Range *Notes: Single pulse Pw=10ms Ptot Tj TS G S P FORM A IS AVAILABLE Value 40 20 6 3 5 300 150 -55 to +150 Unit V V V A(DC) A(Pulse)* mW OC OC РАДИОТЕХ Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: www.rct.