Jiangsu 2SC4115
Transistor
FEATURES
z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) z Excellent current gain characteristics. z Complements to 2SA1585MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 40 20 6 3 500 150 -55-150 Units V V V A mW ℃ ℃ 1 2 3 2. COLLECTOR 3. EMITTERELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage* Transition frequency *pulse test Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCEsat fT Test conditions MIN 40 20 6 0.1 0.1 120 560 0.5 200 290 V MHz TYP MAX UNIT V V V μA μA IC= 50μA, IE=0 IC=1mA , IB=0 IE=50μA, IC=0 VCB=30V, IE=0 VEB=...