2SC4115
2SC4115 is Transistor manufactured by Jiangsu.
FEATURES z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) .. z Excellent current gain characteristics. z plements to 2SA1585 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 40 20 6 3 500 150 -55-150 Units V V V A m W ℃ ℃
1 2 3
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage- Transition frequency
- pulse test Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO h FE VCEsat f T Test conditions MIN 40 20 6 0.1 0.1 120 560 0.5 200 290 V MHz TYP MAX UNIT V V V μA μA
IC= 50μA, IE=0 IC=1m A , IB=0 IE=50μA, IC=0 VCB=30V, IE=0 VEB= 5V, IC=0 VCE=2V, IC= 0.1A IC= 2A, IB=0.1A VCE=2V, IC=0.5 A F=100MHz
CLASSIFICATION OF h FE
Rank Range marking Q 120-270 4115Q R 180-390 4115R S 270-560 4115S
Typical characteristics
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