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10N65F - N-CHANNEL MOSFET

Download the 10N65F datasheet PDF. This datasheet also covers the 10N65 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (10N65-CHONGQINGPINGYANG.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 10N65F
Manufacturer CHONGQING PINGYANG
File Size 187.58 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet 10N65F Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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10N65(F,B,H) 10A mps,650 Volts N-CHANNEL MOSFET FEATURE  10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 10N65 ITO-220AB 10N65F TO-263 10N65B TO-262 10N65H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM EAS IAR EAR dv/dt TJ,TSTG TL Mounting Torque 6-32 or M3 screw 10N65 650 ±30 10 40 300 10 30 5.