CGHV96050F1
Description
Cree’s CGHV96050F1 is a gallium nitride (Ga N) High Electron Mobility Transistor (HEMT) on Silicon Carbide (Si C) substrates. This Ga N Internally Matched (IM) FET offers excellent power added efficiency in parison to other technologies. Ga N has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. Ga N HEMTs also offer greater power density and wider bandwidths pared to Ga As transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
PN: CGHV96050F1 Package Type: 440210
Typical Performance Over 7.9
- 8.4 GHz (TC = 25˚C)
Parameter Linear Gain Output Power Power Gain Power Added Efficiency
7.9 GHz 17.0 22.4 15.6 30
8.0 GHz 16.7 28.2 15.0 37
8.1 GHz 16.4 28.2 15.1 37
8.2 GHz 15.9 31.6 14.5 39
8.3 GHz 15.2 31.6 14.0 38
8.4 GHz 14.6 31.6 13.2 37
Units d B W d B %
Note: Measured at -30 d Bc, 1.6 MHz...
