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CGHV96050F1 Datasheet Preview

CGHV96050F1 Datasheet

Input/Output Matched GaN HEMT

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CGHV96050F1
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output
Matched GaN HEMT
Description
Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET
offers excellent power added efficiency in comparison to other technologies. GaN
has superior properties compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity and higher thermal
conductivity. GaN HEMTs also offer greater power density and wider bandwidths
compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged
package for optimal electrical and thermal performance.
PN: CGHV96050F1
Package Type: 440210
Typical Performance Over 7.9 - 8.4 GHz (TC = 25˚C)
Parameter
Linear Gain
Output Power
Power Gain
Power Added Efficiency
7.9 GHz
17.0
22.4
15.6
30
8.0 GHz
16.7
28.2
15.0
37
8.1 GHz
16.4
28.2
15.1
37
8.2 GHz
15.9
31.6
14.5
39
8.3 GHz
15.2
31.6
14.0
38
8.4 GHz
14.6
31.6
13.2
37
Units
dB
W
dB
%
Note: Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2
Features
7.9 - 8.4 GHz Operation
80 W POUT typical
>13 dB Power Gain
33% Typical PAE
50 Ohm Internally Matched
<0.1 dB Power Droop
Applications
Satellite Communication
Terrestrial Broadband
Large Signal Models Available for ADS and MWO
Rev 2.2 - May 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com




CREE

CGHV96050F1 Datasheet Preview

CGHV96050F1 Datasheet

Input/Output Matched GaN HEMT

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CGHV96050F1
Absolute Maximum Ratings (not simultaneous)
Parameter
Drain-source Voltage
Gate-source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Drain Current1
Maximum Forward Gate Current
Soldering Temperature2
Screw Torque
Symbol
VDSS
VGS
PDISS
TSTG
TJ
IDMAX
IGMAX
TS
τ
Rating
100
-10, +2
57.6 / 86.4
-65, +150
225
6
14.4
245
40
Thermal Resistance, Junction to Case
RθJC
1.26
Thermal Resistance, Junction to Case
RθJC
Case Operating Temperature3
TC
2.16
-40, +150
Notes:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library
3 See also, the Power Dissipation De-rating Curve on Page 10
Units
Volts
Volts
Watts
˚C
˚C
Amps
mA
˚C
in-oz
˚C/W
˚C/W
˚C
2
Conditions
25˚C
25˚C
(CW / Pulse)
25˚C
Pulse Width = 100 µs, Duty Cycle =
10%, PDISS = 86.4 W
CW, 85˚C, PDISS = 57.6 W
Electrical Characteristics (Frequency = 7.9 - 8.4 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol Min.
DC Characteristics1
Gate Threshold Voltage
VGS(TH)
-3.8
Gate Quiescent Voltage
VQ
Saturated Drain Current2
IDS
11.5
Drain-Source Breakdown Voltage VBD
100
RF Characteristics3
Small Signal Gain
S21
13.25
Input Return Loss
S11
Output Return Loss
S22
Power Gain3, 4
Power Gain3, 4
Power Added Efficiency3, 4
Power Added Efficiency3, 4
OQPSK Linearity3, 4
OQPSK Linearity3, 4
Output Mismatch Stress
PG1
PG2
PAE1
PAE2
ACLR1
ACLR2
VSWR
10.75
10.75
18
18
Typ. Max.
-3.0 -2.3
-3.0 –
13.0 –
16 –
–4.9 -3.0
–10.7 -5.5
15.6 –
13.5 –
25
27
-26
-26
5:1 –
Units Conditions
V
VDS = 10 V, ID = 14.4 mA
V
VDS = 40 V, ID = 500 mA
A
VDS = 6.0 V, VGS = 2.0 V
V
VGS = -8 V, ID = 14.4 mA
dB VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm
dB VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm
dB VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm
dB VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 7.9 GHz
dB VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 8.4 GHz
%
VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 7.9 GHz
%
VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 8.4 GHz
dBc VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 7.9 GHz
dBc VDD = 40 V, IDQ = 500 mA, POUT = 44 dBm, Freq. = 8.4 GHz
Y
No damage at all phase angles, VDD = 40 V, IDQ = 500 mA
Notes:
1 Measured on wafer prior to packaging
2 Scaled from PCM data
3 Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha: Filter = 0.2
4 Fixture loss de-embedded using the following offsets: At 7.9 GHz, input and output = 0.45 dB. At 8.4 GHz, input = 0.50 dB and output = 0.55 dB
Rev 2.2 - May 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com


Part Number CGHV96050F1
Description Input/Output Matched GaN HEMT
Maker CREE
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