CGHV96050F1
Description
Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies.
Key Features
- 7.9 - 8.4 GHz Operation *
- 80 W POUT typical >13 dB Power Gain
- 33% Typical PAE
- 50 Ohm Internally Matched
- <0.1 dB Power Droop
