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CGHV96050F1 - Input/Output Matched GaN HEMT

Description

Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.

This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies.

Features

  • 7.9 - 8.4 GHz Operation.
  • 80 W POUT typical >13 dB Power Gain.
  • 33% Typical PAE.
  • 50 Ohm Internally Matched.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance. PN: CGHV96050F1 Package Type: 440210 Typical Performance Over 7.9 - 8.
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