CRTK700N10S-G mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance (Rdson≤70mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Tes.
Power switch circuit of adaptor and charger.
Absolute（Tj= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID .
CRTK700N10S-G the silicon N-channel Enhanced VDSS
100
VDMOSFETs, is obtained by the high density Trench technology ID
13
which reduce the conduction loss, improve switching PD
22.7
RDS(ON)
57
performance and enhance the avalanche energy. Th.
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