CRTK032N03L2P mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤3.2mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Tes.
The
package form is PDFN3.3*3.3, which accords with the RoHS
standard.
Features：
* Fast Switching
* Low ON .
CRTK032N03L2P the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is
VDSS
30 V
ID（Silicon limite.
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