CRTM058N04L2-G mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤5.8 mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Te.
The
package form is PDFN5×6, which accords with the RoHS standard.
Features：
* Fast Switching
* Low ON Resis.
CRTM058N04L2-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is
VDSS ID（Silicon limited cur.
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