* Fast Switching
* Low ON Resistance(Rdson≤110Ω)
* Low Gate Charge (Typical Data:8nC)
* Low Reverse transfer capacitances(Typical:2.67pF)
* 100%.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating .

CS01N100 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transisto.

CS01N60ASRD-G

CS01

CS01-05P-2

CS010EKET12H

CS005

CS005C

CS005L

CS02

CS020EKET12H

CS025EKET12H

CS03

CS0305U

CS0350BL