CS01N60ASRD-G mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤500Ω) l Low Gate Charge (Typical Data:3.1nC) l Low Reverse transfer capacitances(Typical:1.3pF) l Halogen Free
Applications:
.
TV power.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1 VGS dv/dt a2 PD
VESD(G-S)
TJ.
VDSS
600
V
CS01N60 ASRD-G, the silicon N-channel Enhanced ID
0.04
A
VDMOSFETs, is obtained by the self-aligned planar Technology PD(TA=25℃)
0.5
W
which reduce the conduction loss, improve switching
RDS(ON)Typ
160
Ω
performance and enha.
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