CS100N06D3-G mosfet equivalent, silicon n-channel power trench mosfet.
* Fast Switching
* Low ON Resistance (Rdson≤10mΩ)
* Low Gate Charge (Typical Data: 88.8nC)
* Low Reverse transfer capacitances(Typical:220pF)
* .
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
.
CS100N06 D3-G the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various po.
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