CS100N08A0 mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤8.5mΩ)
* Low Gate Charge (Typical Data:59.8nC)
* Low Reverse transfer capacitances(Typical:237pF)
* 100% .
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
V.
CS100N08 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching
VDSS ID（Silicon limited current） PD(TC=25℃) RDS(ON)Typ
performance and enhance the avalanche energ.
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