CS14N25FA9R mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤0.25Ω) l Low Gate Charge (Typical Data:22.7nC) l Low Reverse transfer capacitances(Typical:13pF) l 100% Single Pulse avalanche.
Power switch circuit of adaptor and charger.
Absolute（TJ= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
V.
VDSS
250
CS14N25F A9R, the silicon N-channel Enhanced ID
14
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(TC=25℃)
35
which reduce the conduction loss, improve switching
RDS(ON)Typ
0.20
performance and enhance the avalanc.
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