l Fast Switching l Low ON Resistance(Rdson≤0.56Ω) l Low Gate Charge (Typical Data: 50.5nC) l Low Reverse transfer capacitances(Typical: 10.4pF) l 100% Single Pulse avala.

Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS16N65F A9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various .

CS16N65FA9H

CS16N65A8H

CS16N60A8H

CS16N60FA9H

CS16N06AE-G

CS1600

CS1601-7R

CS1608

CS1615M

CS1615M1A

CS1621

CS16210

CS16210EP