CS180N06A0 mosfet equivalent, silicon n-channel power mosfet.
VDSS ID（Silicon limited current） PD(TC=25℃) RDS(ON)Typ
60 V 180 A 245 W 3.2 mΩ
l Fast Switching l Low ON Resistance(Rdson≤4mΩ) l Low Gate Charge (Typical Data:86.2nC).
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
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ID .
CS180N06 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching .
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