CS19N10A0 mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤67 mΩ)
l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
100 V 19 A 56.8 W 53 .
The
package form is TO-263, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson.
CS19N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching
VDSS ID PD RDS(ON)Typ
performance and enhance the avalanche energy. This device is
suitabl.
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